Bipolar transistor with upper heterojunction collector and method for making same

US6858509B2 · kind B2 · utility

Assignee

• THALES · FR

Inventors

• Sylvain Delage · Paris, FR
• Simone Cassette · Gif-sur-Yvette, FR
• Didier Floriot · Montigny-le-Bretonneux, FR
• Arnaud Girardot · Tournefeuille, FR

Key dates

• Filing date: Dec 15, 2000
• Grant date: Feb 22, 2005
• Expiry date: May 8, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/852

Abstract

A collector-up heterojunction bipolar transistor including, stacked on a substrate, an emitter layer, a base layer, and a collector layer. In this transistor the surface area of the base-emitter junction is of smaller dimensions than the surface area of the base-collector junction. Further, the material of the base layer exhibits a sensitivity of the electrical conductivity to ion implantation that is lower than the sensitivity of the electrical conductivity of the material of the emitter layer to the same ion implantation.