Semiconductor device having an etch stopper formed of a sin layer by low temperature ALD and method of fabricating the same
US6858533B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 2, 2003 |
| Grant date | Feb 22, 2005 |
| Priority date | — |
| Expiry date | Jul 2, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a semiconductor device having an etch stopper formed of a nitride film by low temperature atomic layer deposition which can prevent damage to a semiconductor substrate and a method for fabricating the semiconductor device. Damage to the semiconductor substrate under the etch stopper composed of a second nitride film can be prevented by forming a first nitride film using high temperature LPCVD on the semiconductor substrate, forming the etch stopper including the second nitride film by low temperature ALD on the first nitride film, and removing the second nitride film by dry etching, thus taking advantage of the different etch selectivities of the first nitride film and the second nitride film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.