Avalanche photodiode array biasing device and avalanche photodiode structure
US6858829B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2001 |
| Grant date | Feb 22, 2005 |
| Priority date | — |
| Expiry date | Feb 3, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/959
Abstract
A photodiode array includes a plurality of arrayed individual diode devices. The arrayed diode devices include at least one active photodiode and at least one reference diode. A bias control circuit for the array monitors operation of the reference diode at an applied first bias voltage and adjusts that applied first bias voltage until optimal reference diode operation is reached. A second bias voltage having predetermined relationship to the first bias voltage is applied to the active photodiode to optimally configure array operation. More specifically, an operational characteristic of the reference diode at the first bias voltage is monitored and compared to a reference value. As a result of this comparison, the circuit adjusts the applied first and second bias voltage in order to drive the reference diode measured characteristic to substantially match the reference value. The operational characteristic that is measured may comprise reference diode responsivity or reference diode output current, and may be based on either electrical or optical device operation. Each avalanche photodiode semiconductor structure may have a conventional reverse biased pn junction semiconductor struc…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.