Discrete polymer memory array and method of making same
US6858862B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2001 |
| Grant date | Feb 22, 2005 |
| Priority date | — |
| Expiry date | Jan 3, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B53/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The invention relates to discrete, spaced-apart ferroelectric polymer memory device embodiments. The ferroelectric polymer memory device is fabricated by spin-on polymer processing and etching using photolithographic technology. The size of the discrete, spaced-apart ferroelectric polymer structures may be tied to a specific photolithography minimum feature dimension.The invention also relates to a process for making embodiments of a polymer memory device that includes discrete, spaced-apart ferroelectric polymer structures. The discrete, spaced-apart ferroelectric polymer structures may have a minimum feature that is tied to the current photolithography that may reduce the voltage and increase the switching speed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.