III-nitride light emitting diode
US6858866B2 · kind B2 · utility
Assignees
Inventor
Key dates
| Filing date | Feb 4, 2002 |
| Grant date | Feb 22, 2005 |
| Priority date | — |
| Expiry date | Feb 14, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention, a III-nitride light emitting diode (LED) and a manufacture method thereof, forms a magnetic metal layer in a conventional III-nitride LED by the method of thermal evaporation, e-beam evaporation, ion sputtering, or electroplate. Due to the eddy current effect, heat is generated by using electromagnetic oven inducing with electromagnetic wave to activate the p-type semiconductor material in III-nitride LED. The present invention has advantages of providing the equipments of simple structure and low cost. The contact resistance between the semiconductors and electrodes is reduced while the III-nitride compound semiconductor material is activated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.