CMP assisted liftoff micropatterning
US6858909B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 29, 2002 |
| Grant date | Feb 22, 2005 |
| Priority date | — |
| Expiry date | Jan 28, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/313
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method and structure for a microelectronic device comprises a first film over a substrate, a first polish resistant layer over the first film, a second film over the first polish resistant layer, a second polish resistant layer over the second film, wherein the first and second polish resistant layers comprise diamond-like carbon. The first film comprises an electrically resistive material, while the second film comprises low resistance conductive material. The first film is an electrical resistor embodied as a magnetic read sensor. The electrically resistive material is sensitive to magnetic fields. The device further comprises a generally vertical junction between the first and second films and a dielectric film abutted to the electrically resistive material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.