Metal oxide semiconductor (MOS) bandgap voltage reference circuit
US6858917B1 · kind B1 · utility
9Cited by
2References
9Claims
0Family size
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Key dates
| Filing date | Dec 5, 2003 |
| Grant date | Feb 22, 2005 |
| Priority date | — |
| Expiry date | Dec 5, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/854
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
A metal oxide semiconductor (MOS) bandgap voltage reference circuit with a plurality of dummy bipolar junction transistors (BJTs) coupled to the mismatched parasitic substrate BJTs for improving parasitic capacitance matching, thereby improving startup behavior of the bandgap reference circuitry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.