Semiconductor memory device having improved bit line sensing operation and method for driving power in a bit line sense amplifier of the semiconductor memory device
US6859405B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2003 |
| Grant date | Feb 22, 2005 |
| Priority date | — |
| Expiry date | Jun 20, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/065
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device having a bit line sense amplifier connected to a bit line pair may include a precharge part to precharge first and second drive nodes of the bit line sense amplifier to an equal voltage level. The device may include a switching part operatively connecting the first and second precharge nodes to the first and second drive nodes in response to sense amplifier drive signals applied during a data non-access mode. To drive power in the bit line sense amplifier, the precharge voltage may be applied in a precharge state to precharge the first and second drive nodes to the equal voltage level, the device may shift from the precharge state to an operational state to cut off the applied precharge voltage, and driving voltages may be applied to the first and second drive nodes to power the bit line sense amplifier of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.