Pressure sensor and manufacturing method thereof
US6860154B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2002 |
| Grant date | Mar 1, 2005 |
| Priority date | — |
| Expiry date | Jan 14, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L1/148
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
It is an object of the present invention to provide a touch mode capacitive pressure sensor having higher pressure durability than conventional sensors. In this invention, a touch mode capacitive pressure sensor has a diaphragm made from boron-doped silicon, and the boron concentration at the top face of the diaphragm is equal to or greater than 1×1019 cm−3 and less than 9×1019 cm−3. Further, in this invention, a touch mode capacitive pressure sensor has a conductive diaphragm made by doping of an impurity and anisotropic etching, and the etch pit density on the top face of the diaphragm is equal to or less than five per μm2, and preferably equal to or less than one per μm2. As a result, the pressure durability of the diaphragm is greatly improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.