Sintered polycrystalline gallium nitride and its production
US6861130B2 · kind B2 · utility
79Cited by
7References
26Claims
0Family size
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Key dates
| Filing date | Nov 2, 2001 |
| Grant date | Mar 1, 2005 |
| Priority date | — |
| Expiry date | Sep 22, 2022 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB01J2203/0685
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
Polycrystalline gallium nitride (GaN) characterized by having the atomic fraction of gallium ranging from between about 49% to 55%, an apparent density of between about 5.5 and 6.1 g/cm3, and a Vickers hardness of above about 1 GPa. Polycrystalline GaN can be made by hot isostatic pressing (HIPing) at a temperature ranging from about 1150° C. to 1300° C. and a pressure ranging from between about 1 and 10 Kbar. Alternatively, polycrystalline GaN can be made by high pressure/high temperature (HP/HT) sintering at a temperature ranging from about 1200° to 1800° C. and a pressure ranging from about 5 to 80 Kbar.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.