Method of forming MEMS device
US6861277B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 2, 2003 |
| Grant date | Mar 1, 2005 |
| Priority date | — |
| Expiry date | Oct 2, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S359/904
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of forming a MEMS device includes depositing a conductive material on a substructure, forming a first sacrificial layer over the conductive material, including forming a substantially planar surface of the first sacrificial layer, and forming a first element over the substantially planar surface of the first sacrificial layer, including communicating the first element with the conductive material through the first sacrificial layer. In addition, the method includes forming a second sacrificial layer over the first element, including forming a substantially planar surface of the second sacrificial layer, forming a support through the second sacrificial layer to the first element after forming the second sacrificial layer, including filling the support, and forming a second element over the support and the substantially planar surface of the second sacrificial layer. As such, the method further includes substantially removing the first sacrificial layer and the second sacrificial layer, thereby supporting the second element relative to the first element with the support.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.