Vacuum processing method and semiconductor device manufacturing method in which high-frequency powers having mutually different frequencies are applied to at least one electrode
US6861373B2 · kind B2 · utility
43Cited by
8References
21Claims
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Key dates
| Filing date | Dec 11, 2001 |
| Grant date | Mar 1, 2005 |
| Priority date | — |
| Expiry date | Dec 24, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32568
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A vacuum processing method that includes placing an article to be processed in a reaction container and simultaneously supplying at least two high-frequency powers having mutually different frequencies to at least one high-frequency electrode to generate plasma in the reaction container by the high-frequency powers introduced into the reaction container from the high-frequency electrode(s), thereby processing the article. The frequencies and power values of the at least two high-frequency powers supplied satisfy required relationships.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.