Semiconductor device
US6861702B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 10, 2002 |
| Grant date | Mar 1, 2005 |
| Priority date | — |
| Expiry date | Jan 1, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
Abstract
A lateral MOSFET exhibiting a high breakdown voltage includes a plurality of unit devices formed in a semiconductor substrate; each unit device including a trench, the side face thereof being extended at any angle from 30 degrees to 90 degrees with respect to the surface of trench; an offset drain region surrounding the side face and the bottom face of trench; an insulator filling trench; a gate electrode extended onto trench such that gate electrode works as a field plate; a source electrode extended above trench such that source electrode works as a field plate; and a drain electrode extended above trench such that drain electrode works as a field plate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.