Magneto-resistive memory device
US6862211B2 · kind B2 · utility
2Cited by
10References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 7, 2003 |
| Grant date | Mar 1, 2005 |
| Priority date | — |
| Expiry date | Jul 7, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/15
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory array for a magneto-resistive memory device is provided. The array includes a plurality of memory cells disposed in rows and columns in the memory array. Each memory cell is paired with another memory cell such that the pair of memory cells are driven to first and second, different states by the same signals. A sense point for reading data from a pair of memory cells is also provided. The sense point is located at a point with one of the memory cells of each pair on one side of the sense point and the other memory cell of each pair located on the other side of the sense point.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.