Sputtering apparatus and sputter film deposition method
US6863785B2 · kind B2 · utility
7Cited by
2References
34Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 7, 2003 |
| Grant date | Mar 8, 2005 |
| Priority date | — |
| Expiry date | Aug 7, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3405
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A sputtering apparatus and a sputter film deposition method, which includes a conventional magnetron and an AC magnetron for deposition of a low refractive index film, and a conventional magnetron and an AC magnetron for deposition of a high refractive index film, performs film deposition by each of the AC magnetrons until having achieved 90% of a designed film thickness, and then performs the film deposition only by each of the conventional magnetrons, and which can control the film thickness with high precision and have excellent productivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.