Photoresist residue removing liquid composition
US6864044B2 · kind B2 · utility
69Cited by
12References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2002 |
| Grant date | Mar 8, 2005 |
| Priority date | — |
| Expiry date | Dec 4, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/422
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The object of the present invention is to provide, in the production of semiconductor circuit elements, a photoresist residue removing liquid composition which is excellent for removing photoresist residues after dry etching without attacking the wiring material or the interlayer insulating film etc.This is made possible by a photoresist residue removing liquid composition containing one or more members selected from the group consisting of reducing compounds and their salts and one or more members selected from the group consisting of aliphatic polycarboxylic acids and their salts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.