Device, method of manufacturing device, electro-optic device, and electronic equipment
US6864133B2 · kind B2 · utility
18Cited by
4References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 22, 2003 |
| Grant date | Mar 8, 2005 |
| Priority date | — |
| Expiry date | Apr 22, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6713
Abstract
A device comprising a semiconductor film (12) formed on a substrate (11), a gate region (15), in which a gate insulating film (13) formed on the semiconductor film and a gate electrode film (14) are laminated, isolation means (A) formed on both sides of the gate region to prevent contact between the gate electrode film and other regions, and a source region and a drain region formed by baking a liquid semiconductor material (17) and disposed on regions on the substrate and on both sides of the gate region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.