Apparatus and method for integral bypass diode in solar cells

US6864414B2 · kind B2 · utility

Assignee

• EMCORE CORPORATION · US

Inventors

• Paul R. Sharps · Albuquerque, US
• Daniel Aiken · Edgewood, US
• Doug Collins · Hayward, US
• Mark A. Stan · Albuquerque, US

Key dates

• Filing date: Oct 24, 2002
• Grant date: Mar 8, 2005
• Expiry date: Dec 15, 2022

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S136/293

Abstract

A solar cell having a multijunction solar cell structure with a bypass diode is disclosed. The bypass diode provides a reverse bias protection for the multijunction solar cell structure. In one embodiment, the multifunction solar cell structure includes a substrate, a bottom cell, a middle cell, a top cell, a bypass diode, a lateral conduction layer, and a shunt. The lateral conduction layer is deposited over the top cell. The bypass diode is deposited over the lateral conduction layer. One side of the shunt is connected to the substrate and another side of the shunt is connected to the lateral conduction layer. In another embodiment, the bypass diode contains an i-layer to enhance the diode performance.