Semiconductor package
US6864574B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 28, 2000 |
| Grant date | Mar 8, 2005 |
| Priority date | — |
| Expiry date | Nov 28, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Electrodes of one face of a semiconductor, which has electrodes formed on both faces, and a heat radiating plate are directly joined to quickly absorb and diffuse heat of the semiconductor, thereby improving a heat radiation effect. At the same time, electrodes on an opposite face of the semiconductor are connected to pillared electrodes that are thicker than a wire for wire bonding and larger in current capacity. These pillared electrodes can accordingly be utilized as connecting terminals to a circuit board. Ceramic is used for the heat radiating plate, so that semiconductors of different functions can be mounted simultaneously.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.