Magnetic random access memory having flux closure for the free layer and spin transfer write mechanism
US6865109B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 6, 2003 |
| Grant date | Mar 8, 2005 |
| Priority date | — |
| Expiry date | Jun 6, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/15
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic random access memory comprises a plurality of memory elements each comprising a magnetic pinned layer; a synthetic antiferromagnetic free layer including a first ferromagnetic layer, a second ferromagnetic layer, and a first nonmagnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, wherein the directions of magnetization of the first ferromagnetic layer and the second ferromagnetic layer are antiparallel; and a first conductive nonmagnetic layer positioned between the magnetic pinned layer and the synthetic antiferromagnetic free layer; and means for applying a current to each of the plurality of memory elements to affect the direction of magnetization of the synthetic antiferromagnetic free layer. A method of storing data using the magnetoresistive random access memory is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.