Edge-emitting semiconductor tunable laser
US6865195B2 · kind B2 · utility
3Cited by
21References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 2, 2001 |
| Grant date | Mar 8, 2005 |
| Priority date | — |
| Expiry date | Jan 24, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/125
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention concerns a tunable edge-emitting semiconductor laser (10) including a resonant cavity delimited by two reflectors (15, 20), one of which is a fixed reflector (15) and the other of which is a mobile reflector (20), and including an active section (1) with gain of length L1 and a tunable section (2) of length L2, characterized in that the total length of the cavity L=L1+L2 is less than or equal to 20 μm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.