Solution-processed thin film transistor formation method
US6867081B2 · kind B2 · utility
10Cited by
7References
47Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 31, 2003 |
| Grant date | Mar 15, 2005 |
| Priority date | — |
| Expiry date | Jul 31, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/1135
Abstract
An exemplary solution-processed thin film transistor formation method of the invention forms solution-processed thin film layers into a transistor structure. During formation, semiconductor portions of the transistor structure are selectively heated via a laser to modify the material state of semiconductor material from a solution deposited material state to a thin film layer material state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.