Method to increase cracking threshold for low-k materials
US6867126B1 · kind B1 · utility
4Cited by
20References
37Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 7, 2002 |
| Grant date | Mar 15, 2005 |
| Priority date | — |
| Expiry date | Nov 7, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02126
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of increasing the cracking threshold of a low-k material layer comprising the following steps. A substrate having a low-k material layer formed thereover is provided. The low-k material layer having a cracking threshold. The low-k material layer is plasma treated to increase the low-k material layer cracking threshold. The plasma treatment including a gas that is CO2, He, NH3 or combinations thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.