Isotopically pure silicon-on-insulator wafers and method of making same
US6867459B2 · kind B2 · utility
8Cited by
8References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 3, 2002 |
| Grant date | Mar 15, 2005 |
| Priority date | — |
| Expiry date | Jul 3, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8581
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides improved semiconductor wafer structures having isotopically-enriched layers and methods of making the same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.