Patent · US Expired

Half voltage generator for use in semiconductor memory device

US6867639B2 · kind B2 · utility

6Cited by
8References
15Claims
0Family size

Assignee

Inventor

Key dates

Filing dateAug 25, 2003
Grant dateMar 15, 2005
Priority date
Expiry dateAug 25, 2023

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C5/147
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A voltage generator for use in a semiconductor memory device provides a stabilized output voltage of half a supply voltage Vcc. The voltage generator includes a reference voltage generator capable of generating first and second reference voltages. A differential amplification drive circuit is capable of generating an output voltage responsive to the first and second reference voltages. A resistance/diode reference voltage generator is capable of generating third and fourth reference voltages. And a pull-up/down drive is capable of changing the output voltage responsive to the third and fourth reference voltages. The resulting voltage generator provides a stable and accurate output voltage that is resistant to output load variations.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.