Method for fabricating a photonic crystal
US6869330B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 23, 2003 |
| Grant date | Mar 22, 2005 |
| Priority date | — |
| Expiry date | Jul 31, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/81
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A photonically engineered incandescence is disclosed. The emitter materials and photonic crystal structure can be chosen to modify or suppress thermal radiation above a cutoff wavelength, causing the emitter to selectively emit in the visible and near-infrared portions of the spectrum. An efficient incandescent lamp is enabled thereby. A method for fabricating a three-dimensional photonic crystal of a structural material, suitable for the incandescent emitter, is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.