Patent · US Expired

Method for fabricating a photonic crystal

US6869330B2 · kind B2 · utility

16Cited by
11References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 23, 2003
Grant dateMar 22, 2005
Priority date
Expiry dateJul 31, 2023

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/81
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A photonically engineered incandescence is disclosed. The emitter materials and photonic crystal structure can be chosen to modify or suppress thermal radiation above a cutoff wavelength, causing the emitter to selectively emit in the visible and near-infrared portions of the spectrum. An efficient incandescent lamp is enabled thereby. A method for fabricating a three-dimensional photonic crystal of a structural material, suitable for the incandescent emitter, is also disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.