High power AllnGaN based multi-chip light emitting diode
US6869812B1 · kind B1 · utility
98Cited by
24References
39Claims
0Family size
Inventor
Key dates
| Filing date | May 13, 2003 |
| Grant date | Mar 22, 2005 |
| Priority date | — |
| Expiry date | May 13, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/856
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A light emitting diode chip having a substantially transparent substrate and having an aspect ratio which defines an elongated geometry provides enhanced efficiency and brightness. Method for forming and operating the same are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.