Method for producing and testing a corrosion-resistant channel in a silicon device
US6869818B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2002 |
| Grant date | Mar 22, 2005 |
| Priority date | — |
| Expiry date | Nov 18, 2022 |
Classification
- Technology area (CPC F)Mechanical Engineering; Lighting; Heating
- CPC primaryF16K2099/0074
- WIPO fieldMechanical elements
- WIPO sectorMechanical engineering
Abstract
A method for producing a corrosion-resistant channel in a wetted path of a silicon device enables such device to be used with corrosive compounds, such as fluorine. A wetted path of a MEMS device is coated with either (1) an organic compound resistant to attack by atomic fluorine or (2) a material capable of being passivated by atomic fluorine. The device is then exposed to a gas that decomposes into active fluorine compounds when activated by a plasma discharge. One example of such a gas is CF4, an inert gas that is easier and safer to work with than volatile gases like ClF3. The gas will passivate the material (if applicable) and corrode any exposed silicon. The device is tested in such a manner that any unacceptable corrosion of the wetted path will cause the device to fail. If the device operates properly, the wetted path is deemed to be resistant to corrosion by fluorine or other corrosive compounds, as applicable.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.