Organic semiconductor device
US6870182B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 4, 2002 |
| Grant date | Mar 22, 2005 |
| Priority date | — |
| Expiry date | Nov 4, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/491
Abstract
An organic semiconductor device of the present invention has an organic semiconductor layer disposed within a depression formed in a substrate; a drain electrode and a source electrode; and a gate electrode to face the organic semiconductor layer with a gate insulating layer interposed. Alternatively, an organic semiconductor device of the present invention has an insulating layer disposed on a substrate; an organic semiconductor layer disposed within a depression formed in the insulating layer; a drain electrode and a source electrode; and a gate electrode disposed to face the organic semiconductor layer with a gate insulating layer interposed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.