Semiconductor light emitting device
US6870191B2 · kind B2 · utility
78Cited by
16References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 24, 2002 |
| Grant date | Mar 22, 2005 |
| Priority date | — |
| Expiry date | Jul 24, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24479
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high external quantum efficiency is stably secured in a semiconductor light emitting device. At least one recess and/or protruding portion is created on the surface portion of a substrate for scattering or diffracting light generated in a light emitting region. The recess and/or protruding portion has a shape that prevents crystal defects from occurring in semiconductor layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.