High power semiconductor device having a Schottky barrier diode
US6870223B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2002 |
| Grant date | Mar 22, 2005 |
| Priority date | — |
| Expiry date | Nov 21, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/64
Abstract
A semiconductor device is configured to prevent destruction of elements and/or miss-operation of the circuit by parasitic effects produced by parasitic transistors when a MOSFET of a bridge circuit is formed on a single chip. A Schottky junction is formed by providing an anode electrode in an n well region where a source region, a drain region, and a p well region of a lateral MOSFET. A Schottky barrier diode constituting a majority carrier device is connected in parallel with a PN junction capable of being forward-biased so that the PN junction is not forward-biased so that minority carriers are not generated, and thereby suppressing parasitic effects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.