Semiconductor device utilizing dummy features to form uniform sidewall structures
US6870230B2 · kind B2 · utility
15Cited by
8References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2002 |
| Grant date | Mar 22, 2005 |
| Priority date | — |
| Expiry date | Nov 21, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An inventive semiconductor device includes: a substrate; a plurality of first projections each including at least a gate electrode and formed on the substrate; and a plurality of second projections formed on the substrate. When a contour surface constituted by the uppermost face of the substrate and by side and upper faces of the first and second projections is measured for every partial area per unit area of the substrate, the maximum partial area of the contour surface is 1.6 or less times larger than the minimum partial area of the contour surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.