High frequency switch circuit device
US6870241B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 27, 2001 |
| Grant date | Mar 22, 2005 |
| Priority date | — |
| Expiry date | Oct 17, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/40
Abstract
A high frequency switch circuit device includes an FET to be a switching element on a semiconductor substrate. The FET includes an n-type well, a gate electrode, a source layer and a drain layer. An n-type well line to be connected to an n-type well layer to be a back gate is connected to a voltage supply node via an inductor. The flow of a high frequency signal between the voltage supply node and the n-type well layer is blocked by the inductor, and the flow of a high frequency signal in the vertical direction is blocked by a depletion layer extending between the n-type well and a p-type substrate region. Moreover, the flow of a high frequency signal in the horizontal direction is blocked by a trench separation insulative layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.