Semiconductor device having a thin-film circuit element provided above an integrated circuit
US6870256B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2002 |
| Grant date | Mar 22, 2005 |
| Priority date | — |
| Expiry date | Sep 25, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19041
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor device, re-wiring is provided on a circuit element formation region of a semiconductor substrate. A columnar electrode for connection with a circuit board is provided on the rewiring. A first insulating film is provided over the semiconductor substrate excluding a connection pad, and a ground potential layer connected to a ground potential is provided on an upper surface of the first insulating film. A re-wiring is provided over the ground potential layer with a second insulating film interposed. The ground potential layer serves as a barrier layer for preventing crosstalk between the re-wiring and circuit element formation region. A thin-film circuit element is provided on the second insulating film, and a second ground potential layer is provided as a second barrier layer over the thin-film circuit element with an insulating film interposed. Re-wiring is provided over the second ground potential layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.