Electron amplifier utilizing carbon nanotubes and method of manufacturing the same
US6870308B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 20, 2003 |
| Grant date | Mar 22, 2005 |
| Priority date | — |
| Expiry date | Feb 20, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/939
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electron amplifier and a method of manufacturing the same are provided. The electron amplifier includes a substrate in which a plurality of through holes are formed, a resistive layer deposited on the sidewalls of the through holes, an electron emissive layer including carbon nanotubes which is deposited on the resistive layer, and an electrode layer formed on each of the upper and lower sides of the substrate. Because the electron emissive layer of the electron amplifier is uniform and provides a high electron emission efficiency, the electron amplification efficiency is improved. The electron amplifier manufacturing method enables economical mass production of electron amplifiers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.