Thin film bulk acoustic wave resonator
US6870445B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2003 |
| Grant date | Mar 22, 2005 |
| Priority date | — |
| Expiry date | Apr 15, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/0442
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The present invention is intended to provide a thin film bulk acoustic wave resonator, which has a resonant excitation portion free from damage caused by etching, a high electromechanical coupling coefficient kt2 and a high quality coefficient Q value, and to provide a thin film bulk acoustic wave resonator having a plurality of different resonant frequencies, which can be formed on the same substrate without increasing number of lithography process.An internal cavity is provided in a semiconductor or insulative substrate such as crystal silicon. The thin film bulk acoustic wave resonator has a layered member comprising a first electrode film, a piezoelectric film and a second electrode film on a thin wall of e.g. single crystal over the internal cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.