Data writing method for semiconductor memory device and semiconductor memory device
US6870773B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2004 |
| Grant date | Mar 22, 2005 |
| Priority date | — |
| Expiry date | Mar 10, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3468
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device includes a first memory cell block capable of rewriting data and having at least one first memory cell, and a second memory cell block capable of rewriting data and having at least one second memory cell adjoining the first memory cell. A data writing method for the semiconductor memory device includes writing data into the first memory cell, writing data into the second memory cell following writing the data into the first memory cell, verifying the data of the first memory cell after writing the data into the second memory cell, and rewriting the data into the first memory cell when insufficiency of the data of the first memory cell as a result of verifying the data of the first memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.