Method for printing etch masks using phase-change materials
US6872320B2 · kind B2 · utility
40Cited by
12References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2001 |
| Grant date | Mar 29, 2005 |
| Priority date | — |
| Expiry date | Dec 14, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0241
- WIPO fieldTextile and paper machines
- WIPO sectorMechanical engineering
Abstract
A method and system for masking a surface to be etched is described. A droplet source ejects droplets of a masking material for deposit on a thin-film or other substrate surface to be etched. The temperature of the thin-film or substrate surface is controlled such that the droplets rapidly freeze upon contact with the thin-film or substrate surface. The thin-film or substrate is then etched. After etching the masking material is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.