Method of fabricating a light emitting device
US6872604B2 · kind B2 · utility
70Cited by
4References
32Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2001 |
| Grant date | Mar 29, 2005 |
| Priority date | — |
| Expiry date | Mar 7, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/8792
Abstract
There is provided an inexpensive light emitting device and an electronic instrument using the same. In this invention, photolithography steps relating to manufacture of a transistor are reduced, so that the yield of the light emitting device is improved and the manufacturing period thereof is shortened. A feature is that a gate electrode is formed of conductive films of plural layers, and by using the selection ratio of those at the time of etching, the concentration of an impurity region formed in an active layer is adjusted.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.