Method for fabricating a semiconductor device
US6872636B2 · kind B2 · utility
7Cited by
7References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2002 |
| Grant date | Mar 29, 2005 |
| Priority date | — |
| Expiry date | Mar 20, 2022 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/24
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A semiconductor device fabricating method includes the step of supplying BCl3 as a doping gas, SiH4 as a film forming gas, and H2 as a carrier gas to a reaction chamber of a semiconductor device fabricating apparatus, wherein SiH4, BCl3 and H2 flow in the reaction chamber on the condition that the film forming pressure ranges from about 0.1 to 100 Pa and the film forming temperature ranges from about 400 to 700° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.