Non-volatile memory device and matrix display panel using the same
US6872969B2 · kind B2 · utility
12Cited by
8References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 9, 2003 |
| Grant date | Mar 29, 2005 |
| Priority date | — |
| Expiry date | Jan 9, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/311
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A non-volatile memory device and a matrix display panel using the memory device are provided. The non-volatile memory device includes a source, a drain, an active layer, a gate insulating layer, and a gate. The active layer is formed of an organic semiconductor in a contact region between the source and the drain. The gate-insulating layer is formed of a ferroelectric material on the active layer, and the gate is formed on the gate-insulating layer. Accordingly, the non-volatile memory device and the matrix display panel are very flexible, lightweight multi-programmable and can be easily manufactured.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.