Diamond ultraviolet luminescent element
US6872981B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2000 |
| Grant date | Mar 29, 2005 |
| Priority date | — |
| Expiry date | Aug 27, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/142
Abstract
A diamond ultraviolet luminescent element (10) having a current-injection light-emitting diode structure includes a high-quality boron-doped p-type diamond crystal (semiconductor layer) (1) synthesized by the high pressure and high temperature method; a phosphorous-doped n-type diamond crystal (n-type semiconductor layer) (3) formed on the first diamond surface by the chemical vapor deposition; an electrode (5) formed on the surface of the n-type semiconductor layer (3); and an electrode (7) formed on the surface of the p-type semiconductor layer (1). The luminescence (235 nm) attributed to the recombination of free excitons resulting from current injection dominates in ultraviolet wavelength region (10).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.