Near hermetic power chip on board device and manufacturing method therefor
US6873049B2 · kind B2 · utility
5Cited by
1References
22Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 31, 2003 |
| Grant date | Mar 29, 2005 |
| Priority date | — |
| Expiry date | Jul 31, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Near-hermetic performance has been reported for power semiconductor devices having a silicon carbide layer deposited on the surface at the semiconductor wafer level. The P-COB device also includes a conformal coating on the silicon carbide layer, which extends the expected lifetime of the P-COB device longer than those devices active coatings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.