Patent · US Expired

System for increasing charge size for single crystal silicon production

US6875269B2 · kind B2 · utility

1Cited by

6References

17Claims

0Family size

Assignee

Advanced Silicon Materials LLC · US

Inventors

Torsten Hartmann · Munich, DE
Henry Wood · Moses Lake, US

Key dates

Filing date	Nov 13, 2002
Grant date	Apr 5, 2005
Priority date	—
Expiry date	Feb 10, 2023

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T117/1088
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

Methods and apparatuses are useful to add polycrystalline rod material to the crucible of a CZ furnace and thereby increase utilization of crucible volume in the production of large diameter CZ silicon ingots. Multiple silicon rods are melted in the CZ furnace, and the subsequent production of a single crystal silicon ingot can occur without operating the isolation valve or opening the upper chamber of the furnace.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.