Semiconductor device, method of manufacturing the same, and method of designing the same
US6875998B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2003 |
| Grant date | Apr 5, 2005 |
| Priority date | — |
| Expiry date | Mar 25, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/68368
Abstract
An object of the present invention is to provide a semiconductor device formed by laser crystallization by which formation of grain boundaries in the TFT channel formation region can be avoided, and a method of manufacturing the same. Still another object of the present invention is to provide a method of designating the semiconductor device. The present invention relates to a semiconductor device with a plurality of cells each having a plurality of TFTs that have the same channel length direction, in which the plural cells form a plurality of columns along the channel length direction, in which an island-like semiconductor film of each of the plural TFTs is crystallized by laser light running in the channel length direction, in which a channel formation region of the island-like semiconductor film is placed on a depressive portion of a base film that has a rectangular or stripe pattern concave and convex with the channel length direction matching the longitudinal direction of the depressive portion, and in which a plurality of wires for electrically connecting the plural cells with one another are formed between the plural columns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.