Multilayer semiconductor device for transmitting microwave signals and associated methods
US6876076B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2002 |
| Grant date | Apr 5, 2005 |
| Priority date | — |
| Expiry date | Jun 27, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A multilayer semiconductor device includes at least one structure for transmitting electrical signals, and in particular, microwave signals. The device includes at least one electrically conductive enclosure that includes a bottom plate and a top plate in two different layers. Lateral walls connect the bottom and top plates. Electrically conductive connecting strips extend into the enclosure and are in an intermediate layer, and are electrically insulated from the enclosure. The enclosure has at least one passage through which extends electrical connections of the connecting strips, which are also electrically insulated from the enclosure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.