Magnetoresistive device and electronic device
US6876574B2 · kind B2 · utility
19Cited by
3References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 27, 2002 |
| Grant date | Apr 5, 2005 |
| Priority date | — |
| Expiry date | Aug 27, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive device (11) having a lateral structure and provided with a non-magnetic spacer layer (3) of organic semiconductor material allows the presence of an additional electrode (19). With this electrode (19), a switch-function is integrated into the device (11). Preferably, electrically conductive layers (13,23) are present for the protection of the ferromagnetic layers (1,2). The magnetoresistive device (11) is suitable for integration into an array so as to act as an MRAM device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.