Method for growing single crystal of compound semiconductor and substrate cut out therefrom
US6878202B2 · kind B2 · utility
1Cited by
4References
12Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 2, 2002 |
| Grant date | Apr 12, 2005 |
| Priority date | — |
| Expiry date | Apr 2, 2022 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/48
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for growing a compound semiconductor single crystal comprising cooling a starting material melt of a compound semiconductor with an upward increasing temperature gradient in a crystal-growing container having a seed crystal placed at a lower end, thereby growing a single crystal upward from the seed crystal, the crystal orientation of the seed crystal in a crystal growth axis direction being an offset orientation of <100>+θ, wherein the offset angle θ is 2°≦θ≦55°.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.