Method for shifting the bandgap energy of a quantum well layer
US6878562B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2001 |
| Grant date | Apr 12, 2005 |
| Priority date | — |
| Expiry date | Jul 26, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3414
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A process for shifting the bandgap energy of a quantum well layer (e.g., a III-V semiconductor quantum well layer) without inducing complex crystal defects or generating significant free carriers. The process includes introducing ions (e.g., deep-level ion species) into a quantum well structure at an elevated temperature, for example, in the range of from about 200° C. to about 700° C. The quantum well structure that has had ions introduced therein includes an upper barrier layer, a lower barrier layer and a quantum well layer. The quantum well layer is disposed between the upper barrier layer and the lower barrier layer. The quantum well structure is then thermally annealed, thereby inducing quantum well intermixing (QWI) in the quantum well structure and shifting the bandgap energy of the quantum well layer. Also, a photonic device assembly that includes a plurality of operably coupled photonic devices monolithically integrated on a single substrate using the process described above.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.