Metal oxide semiconductor heterostructure field effect transistor

US6878593B2 · kind B2 · utility

Assignee

• Sensor Electronic Technology, Inc.

Inventors

• Muhammad Asif Khan · White Bear Lake, US
• Remigijus Gaska · Columbia, US
• Michael Shur · Latham, US
• Jinwei Yang · Columbia, US

Key dates

• Filing date: Aug 25, 2003
• Grant date: Apr 12, 2005
• Expiry date: Aug 25, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

A method and structure for producing nitride based heterostructure devices having substantially lower reverse leakage currents and performance characteristics comparable to other conventional devices. The method and structure include placing one or more layers of nitride-based compounds over a substrate. Additionally, a dielectric layer including silicon dioxide is placed over the nitride-based layers.